Atomic-layer deposited IrO2nanodots for charge-trap flash-memory devices-Reference-Cited by-同舟云学术

Atomic-layer deposited IrO2nanodots for charge-trap flash-memory devices

Published:2007-02-16 Issue:5 Volume:40 Page:1426-1429
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Choi Sangmoo,Cha Young-Kwan,Seo Bum-Seok,Park Sangjin,Park Ju-Hee,Shin Sangmin,Seol Kwang Soo,Park Jong-Bong,Jung Young-Soo,Park Youngsoo,Park Yoondong,Yoo In-Kyeong,Choi Suk-Ho

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/40/i=5/a=017/pdf

Reference20 articles.

1. A silicon nanocrystals based memory

2. Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing

3. Study on SONOS Nonvolatile Memory Technology Using High-Density Plasma CVD Silicon Nitride

4. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

5. Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells

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