Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2175495
Reference18 articles.
1. A silicon nanocrystals based memory
2. Single charge and confinement effects in nano‐crystal memories
3. Three-dimensional simulation of nanocrystal Flash memories
4. Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements
5. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
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