Minimizing the impact of surface potentials in axial InxGa1−xN/GaN nanowire heterostructures by reducing their diameter
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Simulating the electronic properties of semiconductor nanostructures using multiband k·p models;Computational Materials Science;2021-06
2. Spatial emission distribution and carrier recombination dynamics in regularly arrayed InGaN/GaN quantum structure nanocolumns;Japanese Journal of Applied Physics;2016-09-05
3. GaN nanocolumn arrays with diameter <30 nm prepared by two‐step selective area growth;Electronics Letters;2015-12
4. Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1–xN/GaN Axial Nanowire Heterostructures;Nano Letters;2015-06-08
5. Electronic properties of axial In $$_x$$ x Ga $$_{1-x}$$ 1 - x N insertions in GaN nanowires;Journal of Computational Electronics;2015-02-17
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