InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289915
Reference19 articles.
1. InGaN-based violet laser diodes
2. Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature
5. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
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