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Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach

  • Published:2008-09-19 Issue:19 Volume:41 Page:195304
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhu C Y,Ling C C,Brauer G,Anwand W,Skorupa W

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10

2. 4H-SiC p-n Junction-Based Near IR Photon Source;IEEE Sensors Journal;2021-01-15

3. Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC;Journal of Nuclear Materials;2020-07

4. Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion;Scripta Materialia;2019-09

5. Progress of d0magnetism in SiC;Journal of Semiconductors;2017-03
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