Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams-Reference-Cited by-同舟云学术

Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams

Published:2000-05 Issue:9 Volume:87 Page:4119-4125
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Uedono Akira,Tanigawa Shoichiro,Ohshima Takeshi,Itoh Hisayoshi,Yoshikawa Masahito,Nashiyama Isamu,Frank Thomas,Pensl Gerhard,Suzuki Ryoichi,Ohdaira Toshiyuki,Mikado Tomohisa

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373039

Reference28 articles.

1. SiC devices: physics and numerical simulation

2. Damage production and annealing of ion implanted silicon carbide

3. Doping of SiC by Implantation of Boron and Aluminum

4. Ion-beam induced damage and annealing behaviour in SiC

5. Al and B ion‐implantations in 6H‐ and 3C‐SiC

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