Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation-Reference-Cited by-同舟云学术

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Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation

Published:2001-02-26 Issue:9 Volume:78 Page:1234-1236
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Britton D. T.,Barthe M.-F.,Corbel C.,Hempel A.,Henry L.,Desgardin P.,Bauer-Kugelmann W.,Kögel G.,Sperr P.,Triftshäuser W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1350961

Reference17 articles.

1. Electrical and optical characterization of SiC

2. Defect energy levels in electron-irradiated and deuterium-implanted6Hsilicon carbide

3. ESR in irradiated silicon carbide

4. Electron spin resonance in electron‐irradiated 3C‐SiC

5. Irradiation-induced atomic defects in SiC studied by positron annihilation

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3. Determination of defects in 6H–SiC single crystals irradiated with 20MeV Au ions;Applied Surface Science;2008-10

4. Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach;Journal of Physics D: Applied Physics;2008-09-19

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