In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation-Reference-Cited by-同舟云学术

In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

Published:1995-04-14 Issue:4A Volume:28 Page:A17-A22
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Barnett S J,Keir A M,Cullis A G,Johnson A D,Jefferson J,Smith G W,Martin T,Whitehouse C R,Lacey G,Clark G F,Tanner B K,Spirkl W,Lunn B,Hogg J C H,Ashu P,Hagston W E,Castelli C M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/28/i=4A/a=003/pdf

Reference17 articles.

1. Analysis and design of low-dimensional structures and devices using strain: II. Strained layer systems

2. Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy

3. X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers

4. Estimation of percentage relaxation in Si/Si1-xGexstrained-layer superlattices

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