Origin of the OFF state variability in ReRAM cells-Reference-Cited by-同舟云学术

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Origin of the OFF state variability in ReRAM cells

Published:2014-03-20 Issue:14 Volume:47 Page:145102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Salaoru Iulia,Khiat Ali,Li Qingjiang,Berdan Radu,Papavassiliou Christos,Prodromakis Themistoklis

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=14/a=145102/pdf

Reference62 articles.

1. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

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