Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices-Reference-Cited by-同舟云学术

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Published:2024 Issue:5 Volume:9 Page:764-774
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Stasner Pascal¹^ORCID,Kopperberg Nils¹^ORCID,Schnieders Kristoffer²^ORCID,Hennen Tyler¹^ORCID,Wiefels Stefan²^ORCID,Menzel Stephan²^ORCID,Waser Rainer¹²³^ORCID,Wouters Dirk J.¹^ORCID

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik II (IWE2) and JARA-FIT, RWTH Aachen University, Aachen 52074, Germany

2. Peter-Grünberg-Institut 7 (PGI-7), Forschungszentrum Jülich GmbH, Jülich 52425, Germany

3. Peter-Grünberg-Institut 10 (PGI-10), Forschungszentrum Jülich GmbH, Jülich 52425, Germany

Abstract

We fabricate a nano-device that laterally confines the switching oxide and filament to 10 nm. Electrical measurements demonstrate lower variability and reduced ionic noise compared to unconfined filaments, which is supported by our 3D simulation.

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00520H

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