Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor-Reference-Cited by-同舟云学术

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Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor

Published:2015-01-05 Issue:3 Volume:48 Page:035109
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chen Y Q,Xu X B,Lei Z F,Liao X Y,Wang X,Zeng C,En Y F,Huang Y

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=3/a=035109/pdf

Reference22 articles.

1. Impact of forming gas annealing on the dielectric properties of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

2. Applications of Modern Ferroelectrics

3. Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films

4. Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

5. Temperature-dependent current conduction of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HfAlOx-based ferroelectric memristor for nociceptor and synapse functions;The Journal of Chemical Physics;2024-08-26

2. BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration;Solid-State Electronics;2024-06

3. Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO_x tunnel junction memory;Physical Chemistry Chemical Physics;2023

4. Ferroelectricity of low thermal-budget HfAlOx for devices with metal–ferroelectric–insulator–semiconductor structure;RSC Advances;2016

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