Affiliation:
1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea
Abstract
The ferroelectric characteristics of aluminum-doped hafnium oxide-based MFM ferroelectric tunneling junction capacitors with different annealing temperatures are investigated.
Funder
Korea Institute of Energy Technology Evaluation and Planning
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Ministry of Trade, Industry and Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Cited by
10 articles.
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