Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO<sub>2</sub> Intercalation Layer in La:HfO<sub>2</sub> Thin Films-Reference-Cited by-同舟云学术

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO₂ Intercalation Layer in La:HfO₂ Thin Films

Published:2024-01-17 Issue:2 Volume:6 Page:1055-1062
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Xu Kangli¹^ORCID,Wang Tianyu¹²^ORCID,Liu Yongkai¹,Yu Jiajie¹,Li Zhenhai¹,Meng Jialin¹²^ORCID,Zhu Hao¹²^ORCID,Sun Qingqing¹²^ORCID,Zhang David Wei¹²,Chen Lin¹²^ORCID

Affiliation:

1. School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China

2. Zhangjiang Fudan International Innovation Center, Shanghai 201203, China

Funder

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01496

Reference39 articles.

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2. Ferroelectricity in hafnium oxide thin films

3. Muller, J.; Boscke, T. S.; Muller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T. M.; Kalinin, S. V.; Schlosser, T.; Boschke, R.; van Bentum, R.; Schroder, U.; Mikolajick, T. Ferroelectric Hafnium Oxide: A CMOS-Compatible and Highly Scalable Approach to Future Ferroelectric Memories. 2013 IEEE International Electron Devices Meeting (IEDM); IEEE: Washington, DC, USA, 2013; pp 10.8.1–10.8.4.10.1109/IEDM.2013.6724605.

4. Soliman, T.; Müller, F.; Kirchner, T.; Hoffmann, T.; Ganem, H.; Karimov, E.; Ali, T.; Lederer, M.; Sudarshan, C.; Kämpfe, T.; Guntoro, A.; Wehn, N. Ultra-Low Power Flexible Precision FeFET Based Analog In-Memory Computing. 2020 IEEE International Electron Devices Meeting (IEDM): San Francisco, CA, USA, 2020; pp 29.2.1–29.2.4.10.1109/IEDM13553.2020.9372124.

5. Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T. A FeFET Based Super-Low-Power Ultra-Fast Embedded NVM Technology for 22nm FDSOI and Beyond. 2017 IEEE International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2017; pp 19.7.1–19.7.4.

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