Ferroelectricity of low thermal-budget HfAlOx for devices with metal–ferroelectric–insulator–semiconductor structure-Reference-Cited by-同舟云学术

Ferroelectricity of low thermal-budget HfAlOx for devices with metal–ferroelectric–insulator–semiconductor structure

Published:2016 Issue:78 Volume:6 Page:74445-74452
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen Kuen-Yi¹²³⁴,Chu Ka-Lip¹²³⁴,Chen Pin-Hsuan¹²³⁴,Wu Yung-Hsien¹²³⁴

Affiliation:

1. Department of Engineering and System Science

2. National Tsing Hua University

3. Hsinchu

4. Taiwan

Abstract

The effect of annealing temperature on the ferroelectricity of HfAlO_x with Al concentration of 4.5% is physically and electrically investigated by metal–ferroelectric–insulator–semiconductor (MFIS) platform.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA09987D

Reference46 articles.

1. Integration of lead zirconium titanate thin films for high density ferroelectric random access memory

2. Ferroelectric Field Effect Transistors for Memory Applications

3. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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