Evaluation of interface states in MOS structures by DLTS with a bipolar rectangular weighting function
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/14/i=5/a=021/pdf
Reference9 articles.
1. Deep-level-transient spectroscopy: System effects and data analysis
2. Energy‐resolved DLTS measurement of interface states in MIS structures
3. New Developments in Defect Studies in Semiconductors
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. A correlation method for semiconductor transient signal measurements
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hole capture cross section of the Al acceptor level in 4H-SiC;Materials Today Communications;2022-06
2. Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnxEpitaxial Layers by Electrical Measurements;ECS Journal of Solid State Science and Technology;2015-12-30
3. Defect assessment of irradiated STI diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
4. Radiation defects in STI silicon diodes and their effects on device performance;Physica B: Condensed Matter;2001-12
5. Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs;Journal of Applied Physics;1998-09-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3