Correlations between ESR and photoluminescence in slightly hydrogenated silicon nitride
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/28/i=3/a=018/pdf
Reference23 articles.
1. The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx(0
2. Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride
3. Nature of the dominant deep trap in amorphous silicon nitride
4. First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride
5. Identification of a New Defect in Silicon Nitride Films
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