The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/18/i=10/a=015/pdf
Reference23 articles.
1. Schottky-barrier capacitance measurements for deep level impurity determination
2. Transient capacitance measurements on resistive samples
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4. The electrical properties of sulphur in silicon
5. DLTS and PTIS of new donors in oxygen-doped germanium
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2. Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy;Semiconductor Science and Technology;2020-02-01
3. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
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