Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/2/045/pdf
Reference10 articles.
1. Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition
2. Microcrystalline silicon solar cells deposited at high rates
3. Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells
4. Effects of seeding methods on the fabrication of microcrystalline silicon solar cells using radio frequency plasma enhanced chemical vapor deposition
5. Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition
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2. Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250°C;Chinese Physics B;2012-06
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4. Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth;Acta Physica Sinica;2012
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