Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250°C
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evolution of medium-range order and surface compositions by mechanism-driven model with realistic network;Applied Surface Science;2019-01
2. Low-Temperature Deposition of nc-SiO x :H below 400°C Using Magnetron Sputtering;Chinese Physics Letters;2015-04
3. Influence of substrate bias voltage on the microstructure of nc-SiO x :H film;Chinese Physics B;2015-02
4. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering;Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy;2015-02
5. Hydrothermal synthesis mechanism and electrochemical performance of LiMn0.6Fe0.4PO4 cathode material;Rare Metals;2015-01-04
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