An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering-Reference-Cited by-同舟云学术

An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering

Published:2015-02 Issue: Volume:136 Page:1409-1417
ISSN:1386-1425
Container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Author:

Daouahi Mohsen,Omri Mourad,Kerm Abdul Ghani Yousseph,Al-Agel Faisal Abdulaziz,Rekik Najeh

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference72 articles.

1. Growth and Properties of β‐SiC Single Crystals

2. Initial studies on the possibility to use chemical sensors to monitor and control boilers

3. Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix

4. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

5. Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.

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