Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation-Reference-Cited by-同舟云学术

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Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

Published:2017-03-08 Issue:2 Volume:4 Page:025043
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Balakrishnan Nilanthy,Kudrynskyi Zakhar R,Smith Emily F,Fay Michael W,Makarovsky Oleg,Kovalyuk Zakhar D,Eaves Laurence,Beton Peter H,Patanè Amalia

Funder

Engineering and Physical Sciences Research Council

The Horizon 2020 Graphene Flagship

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa61e0/pdf

Reference41 articles.

1. 2D materials and van der Waals heterostructures

2. Van der Waals stacked 2D layered materials for optoelectronics

3. Coincidence Lattices of 2D Crystals: Heterostructure Predictions and Applications

4. Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

5. Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions

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