Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors-Reference-Cited by-同舟云学术

Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

Author:

Avsar Ahmet¹,Vera-Marun Ivan J.¹²,Tan Jun You¹,Watanabe Kenji³,Taniguchi Takashi³,Castro Neto Antonio H.¹,Özyilmaz Barbaros¹⁴

Affiliation:

1. Centre for Advanced 2D Materials & Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore

2. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. Nanocore, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore

Funder

National Research Foundation-Prime Minister's office, Republic of Singapore

National University of Singapore

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Singapore Millennium Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference38 articles.

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