Engineering of the perovskite/electron-transporting layer interface with transition metal chalcogenides for improving the performance of inverted perovskite solar cells

Author:

Tsikritzis Dimitris12ORCID,Chatzimanolis Konstantinos1,Tzoganakis Nikolaos1,Rogdakis Konstantinos12ORCID,Zappia Marilena Isabella3,Martín-García Beatriz456ORCID,Bagheri Ahmad34,Beydaghi Hossein3,Děkanovský Lukáš7,Sofer Zdeněk7ORCID,Bellani Sebastiano3,Bonaccorso Francesco34ORCID,Kymakis Emmanuel12ORCID

Affiliation:

1. Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece

2. Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece

3. BeDimensional S.p.A., Via Lungotorrente Secca 30R, 16163 Genova, Italy

4. Graphene Labs, Istituto Italiano di Tecnologia, Via Morego, 30, 16163, Genova, Italy

5. CIC NanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain

6. IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain

7. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic

Abstract

Representative 2D transition metal chalcogenides (InSe, SnS2, MoSe2) were placed at the perovskite/ETL interface in inverted perovskite solar cells to improve performance and stability.

Funder

H2020 Research Infrastructures

Ministerstvo Školství, Mládeže a Tělovýchovy

HORIZON EUROPE European Research Council

European Regional Development Fund

Publisher

Royal Society of Chemistry (RSC)

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