Polarization doping of graphene on silicon carbide-Reference-Cited by-同舟云学术

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Polarization doping of graphene on silicon carbide

Published:2014-11-13 Issue:3 Volume:1 Page:035003
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Mammadov Samir,Ristein Jürgen,Koch Roland J,Ostler Markus,Raidel Christian,Wanke Martina,Vasiliauskas Remigijus,Yakimova Rositza,Seyller Thomas

Funder

European Union

European Science Foundation

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/1/3/035003/pdf

Reference40 articles.

1. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

3. Epitaxial Graphenes on Silicon Carbide

4. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

5. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

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