Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates-Reference-Cited by-同舟云学术

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Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

Published:2009-06 Issue:6 Volume:30 Page:650-652
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Moon J.S.,Curtis D.,Hu M.,Wong D.,McGuire C.,Campbell P.M.,Jernigan G.,Tedesco J.L.,VanMil B.,Myers-Ward R.,Eddy C.,Gaskill D.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4968003/04915756.pdf?arnumber=4915756

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