Si1−x−yGexCy: a new material for future microelectronics?
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1997/i=T69/a=007/pdf
Reference11 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
3. Electroluminescence at room temperature of a SinGemstrained‐layer superlattice
4. Optimization of growth parameters for direct band gap SiGe superlattices
5. Luminescence from monolayer-thick Ge quantum wells embedded in Si
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1. Introduction;Copper Interconnect Technology;2009
2. Optical characterization of as-prepared and rapid thermal oxidized partially strain compensated Si1−x−y GexCy films;Materials Science in Semiconductor Processing;2001-12
3. Generation and amplification of sub-THz coherent acoustic phonons under the drift of two-dimensional electrons;Physical Review B;2000-09-15
4. Application of selective epitaxial growth in MBE for short-duration gating systems;Thin Solid Films;1998-05
5. Si1 - x - yGexCy: A New Material for Future Microelectronics?;Physica Scripta;1997-06-01
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