Luminescence from monolayer-thick Ge quantum wells embedded in Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.2001/fulltext
Reference14 articles.
1. Photoluminescence spectroscopy of localized excitons in Si1−xGex
2. Systematic blue shift of exciton luminescence in strained Si1 −s xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxy
3. Photoluminescence of high‐quality SiGe quantum wells grown by molecular beam epitaxy
4. Evidence of segregation in (100) strained Si1−xGexalloys grown at low temperature by molecular beam epitaxy
5. Influence of surfactants in Ge and Si epitaxy on Si(001)
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2. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission;Frontiers in Materials;2016-03-07
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