Optimization of growth parameters for direct band gap SiGe superlattices
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
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1. Multislice calculations for quantitative HAADF STEM analysis of germanium diffusion in strained silicon;Journal of Physics: Conference Series;2013-11-29
2. Miniband-related 1.4–1.8μm Luminescence of Ge/Si Quantum Dot Superlattices;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
3. Electronic structure of light-emitting superlattices composed of quantum films of silicon: Theoretical approach;Physical Review B;2007-06-05
4. Optical properties of Si/Ge superlattices;Optical Properties. Part 3;2007
5. Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices;Nanoscale Research Letters;2006-08-01
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