Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/90/i=9/a=095801/pdf
Reference45 articles.
1. Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures
2. Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
3. Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures
4. Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
5. Schottky barrier height modification in Au/n-type 6H–SiC structures by PbS interfacial layer
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