On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti:DLC) interlayer
Author:
Funder
Gazi Üniversitesi
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference44 articles.
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method;Physica B: Condensed Matter;2024-03
2. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer;Materials Today Communications;2024-03
3. Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer;Gazi University Journal of Science Part A: Engineering and Innovation;2024-01-19
4. The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures;Physica Scripta;2024-01-18
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