Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2769284
Reference52 articles.
1. The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method
2. The effects of treatment of Si(111) surfaces with NH4F solution on Schottky diode parameters
3. Photon detector composed of metal and semiconductor nanoparticles
4. Schottky diode back contacts for high frequency capacitance studies on semiconductors
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