A Study of Ti as a Diffusion Barrier Between PtSi or Pd2Si and Al
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/24/i=2/a=011/pdf
Reference16 articles.
1. Chromium thin film as a barrier to the interaction of Pd2Si with Al
2. Study of Al/Pd2Si contacts on Si
3. Electrical and mechanical features of the platinum silicide‐aluminum reaction
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reaction of Ti with WSi2;Journal of Applied Physics;1997-12-15
2. TiNxOy as a barrier between Cr-Si-(O) and aluminium thin films;Thin Solid Films;1991-05
3. Film Thickness Effects and their Influence on the Stability of the CrSiO/VO/Al Film Systems;physica status solidi (a);1990-06-16
4. Kinetics and mechanism of oxide formation on titanium, vanadium and chromium thin films;Journal of the Less Common Metals;1990-03
5. Evaluation of high-Temperature diffusion barriers for the Pt-Mo system;Metallurgical Transactions A;1988-09
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