Reaction of Ti with WSi2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366476
Reference13 articles.
1. Chemical Vapor Deposition of Tungsten (CVD W) as Submicron Interconnection and Via Stud
2. Applicability of TiN Adhesion Layer Formed by Nitridation of Sputtered Ti Film to Blanket CVD-W Contact Filling
3. Deep Subhalf‐Micron Contact Filling Technology Using Control Etching and Collimated Ti Sputtering Techniques
4. Interface microstructure of titanium thin‐film/silicon single‐crystal substrate correlated with electrical barrier heights
5. Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNyunder rapid thermal annealing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of annealing ambient on WSi[sub x](x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. Solid-phase reactions, self-propagating high-temperature synthesis, and order-disorder phase transition in thin films;Journal of Experimental and Theoretical Physics Letters;2000-03
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