Chromium thin film as a barrier to the interaction of Pd2Si with Al-Reference-Cited by-同舟云学术

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Chromium thin film as a barrier to the interaction of Pd2Si with Al

Published:1977-05 Issue:5 Volume:20 Page:413-415
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Olowolafe J.O.,Nicolet M-A.,Mayer J.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Planar millimeter-wave epitaxial silicon Schottky-barrier converter diodes

2. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts

3. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes

4. Formation kinetics and structure of Pd2Si films on Si

5. The specific contact resistance of Pd2Si contacts on n- and p-Si

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1. The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes fromI–V–Tmeasurements;Semiconductor Science and Technology;2008-01-31

2. Formation of smooth interfaces during silicide growth utilizing a diffusion barrier;Microelectronic Engineering;2000-01

3. Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses;Journal of Applied Physics;1992-11

4. Interactions of Cu with CoSi2, CrSi2and TiSi2with and without TiNxbarrier layers;Journal of Applied Physics;1990-12-15

5. Interaction of Cu with CoSi2with and without TiNxbarrier layers;Applied Physics Letters;1990-09-24

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