Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference23 articles.
1. The Past, Present, and Future of Silicon Photonics
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1. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects;Photonics;2019-03-01
2. Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature;Chinese Physics B;2014-11
3. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate;Chinese Physics B;2013-11
4. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells;Applied Physics Letters;2012-12-03
5. Photoluminescence of silicone oil treated by fluorocarbon plasma;Chinese Physics B;2012-09
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