Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/116804/pdf
Reference16 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
3. Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon
4. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes
5. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors
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