Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference6 articles.
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1. High-Performance Microring Resonator Ge-on-Si Photodetectors by Optimizing Absorption Layer Length;IEEE Photonics Journal;2020-08
2. High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation;Optics Express;2020-07-29
3. Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor*;Chinese Physics B;2020-02-01
4. Research progress of Si-based germanium materials and devices;Journal of Semiconductors;2016-08
5. Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects;Chinese Physics B;2014-03
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