A study on Al 2 O 3 passivation in GaN MOS-HEMT by pulsed stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
2. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
3. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
4. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress
5. SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs
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2. Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN;Journal of Applied Physics;2024-03-19
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4. Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT;Materials Science in Semiconductor Processing;2023-01
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