Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/12/128101/pdf
Reference22 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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