Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN Dual Gate Dielectric and In-Situ H2(15%)/N2(85%) Plasma Pretreatment
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, 100871, China
2. Beijing Chip Identification Technology Co., Ltd., Beijing, 102200, China
Abstract
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Normally-off p-GaN/AlGa/GaN high electron mobility transistors using hydrogen plasma treatment;Hao;Applied Physics Letters,2016
2. High-frequency enhancement-mode millimeter wave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz;Wu;Chinese Physics B,2021
3. Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs;Jauss;IEEE Transactions on Electron Devices,2017
4. Insulated gate and surface passivation structures for GaN-based power transistors;Yatabe;Journal of Physics. D, Applied Physics,2016
5. Characterization of leakage and reliability of SiNx gate dielectric by Low-pressure chemical vapor deposition for GaN-based MIS-HEMTs;Hua;IEEE Transactions on Electron Devices,2015
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