Evidence of GeO volatilization and its effect on the characteristics of HfO2grown on a Ge substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=3/a=037702/pdf
Reference23 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology
3. High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing
4. Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates
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1. Properties of AlN Thin Films on p-Ge Deposited by Thermal Atomic Layer Deposition;Transactions on Electrical and Electronic Materials;2018-10-17
2. Improvement in electrical properties of high- κ film on Ge substrate by an improved stress relieved pre-oxide method;Chinese Physics B;2016-02
3. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization;Acta Physica Sinica;2016
4. Applications of exchange coupled bi-magnetic hard/soft and soft/hard magnetic core/shell nanoparticles;Physics Reports;2015-02
5. Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application;Chinese Physics B;2014-05-30
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