Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/6/067701/pdf
Reference25 articles.
1. Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation
2. Evidence of GeO volatilization and its effect on the characteristics of HfO2grown on a Ge substrate
3. Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors
4. Fermi-level pinning and charge neutrality level in germanium
5. The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tuning thermal stability and electronic properties of germanium oxide on Ge(001) surface with the incorporation of nitrogen;Surface and Interface Analysis;2018-02-09
2. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization;Acta Physica Sinica;2016
3. Impact of Arsenic Related Defects on Electronic Performance of ZrO 2 /GaAs: Density Functional Theory Calculations;Chinese Physics Letters;2015-01
4. Research progress of high mobility germanium based metal oxide semiconductor devices;Acta Physica Sinica;2015
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