Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/3/036102/pdf
Reference27 articles.
1. Response of advanced bipolar processes to ionizing radiation
2. Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures
3. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
4. Mechanisms for radiation dose-rate sensitivity of bipolar transistors
5. Effects of hydrogen motion on interface trap formation and annealing
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1. Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors;ACS Applied Electronic Materials;2023-11-08
2. Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors;Journal of Materials Science: Materials in Electronics;2023-05
3. A modified accelerated testing method of ELDRS in extreme-low dose rate irradiation;The European Physical Journal Plus;2020-11
4. Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits;IEEE Transactions on Nuclear Science;2019-07
5. Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor;Electronics;2019-06-11
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