Mechanisms for radiation dose-rate sensitivity of bipolar transistors-Reference-Cited by-同舟云学术

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Mechanisms for radiation dose-rate sensitivity of bipolar transistors

Published:2003-12 Issue:6 Volume:50 Page:1901-1909
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Hjalmarson H.P.¹,Pease R.L.,Witczak S.C.,Shaneyfelt M.R.,Schwank J.R.,Edwards A.H.,Hembree C.E.,Mattsson T.R.

Affiliation:

1. Sandia Nat. Labs., Albuquerque, NM, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/28269/01263819.pdf?arnumber=1263819

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