First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica

Abstract

The structural parameters, electron localization functions, electron paramagnetic resonance (EPR) parameters, formation energies, and thermodynamic transition levels of various oxygen vacancy defects in amorphous silica are comprehensively and integrally investigated by using density functional theory. The trends of changes in the oxygen vacancy defect structure and electron localization induced by the increase in distance between defective silicon atoms are clearly identified. It is shown that the dimer configuration may be the potential structure of the Eδ′ center. For the back-projected unpuckered configuration and the puckered configuration, whose EPR parameters are more consistent with the experimental values of the Eγ′ center, the unpaired electron localized on the sp3 hybridized silicon atom is a common feature. Due to the three-coordinated oxygen atom in the forward-oriented configuration, the EPR parameters are closest to those of the Eα′ center. Transformations of oxygen vacancy defects under different charge states are studied by sequentially adding and removing electrons. The thermodynamic transition level analysis reveals that the dimer and forward configurations may behave as deep traps for electron accumulation. The back-projected puckered fourfold-coordinated and fivefold-coordinated configurations are comparatively stable and may be able to function as shallow traps for electron transport. The neutral double unpuckered, neutral back-projected puckered fourfold-coordinated, and neutral back-projected unpuckered configurations are more likely to lose electrons during hole trapping. As the bias voltage is repeatedly changed, the defect density of the puckered configuration may reduce, while that of the dimer and unpuckered configuration may take an opposite trend.