Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors-Reference-Cited by-同舟云学术

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Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

Published:2023-05 Issue:13 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Zhou Hang,Zhang Guanghui,Duan Binghuang,Liu Yang^ORCID

Funder

National Natural Science Foundation of China

State Key Laboratory of Nuclear Physics and Technology, Peking University

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-10534-3.pdf

Reference38 articles.

1. J. Boch, F. Saigné, A. Touboul, S. Ducret, J.-F. Carlotti, M. Bernard, R. Schrimpf, F. Wrobel, G. Sarrabayrouse, Dose rate effects in bipolar oxides: Competition between trap filling and recombination. Appl. Phys. Lett. 88(23), 232113 (2006)

2. X. Chen, H. Barnaby, B. Vermeire, K. Holbert, D. Wright, R. Pease, G. Dunham, D. Platteter, J. Seiler, S. McClure et al., Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides. IEEE Trans. Nucl. Sci. 54(6), 1913–1919 (2007)

3. H.P. Hjalmarson, R.L. Pease, R.A. Devine, Calculations of radiation dose-rate sensitivity of bipolar transistors. IEEE Trans. Nucl. Sci. 55(6), 3009–3015 (2008)

4. X.J. Chen, H.J. Barnaby, P. Adell, R.L. Pease, B. Vermeire, K.E. Holbert, Modeling the dose rate response and the effects of hydrogen in bipolar technologies. IEEE Trans. Nucl. Sci. 56(6), 3196–3202 (2009)

5. N.L. Rowsey, M.E. Law, R.D. Schrimpf, D.M. Fleetwood, B.R. Tuttle, S.T. Pantelides, A quantitative model for eldrs and h$$_2$$ degradation effects in irradiated oxides based on first principles calculations. IEEE Trans. Nucl. Sci. 58(6), 2937–2944 (2011)

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