Effects of different dopants on switching behavior of HfO 2 -based resistive random access memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/10/107306/pdf
Reference9 articles.
1. Metal–Oxide RRAM
2. Emerging memories: resistive switching mechanisms and current status
3. Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2
4. Bipolar resistive switching in Cr-doped TiO x thin films
5. Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
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