Resistive switching behavior in nonmagnetic oxides-Reference-Cited by-同舟云学术

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Resistive switching behavior in nonmagnetic oxides

Published:2023 Issue: Volume: Page:625-668
ISSN:
Container-title:Defect-Induced Magnetism in Oxide Semiconductors
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Author:

Gupta Surbhi,Sati Prakash Chandra,Borkar Hitesh

Publisher

Elsevier

Reference215 articles.

1. SPICE modeling of memristors;Abdalla;Proceedings—IEEE international symposium on circuits and systems,2011

2. Akinaga, H., & Shima, H. (2010). Proc. IEEE 98.

3. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach;Aldana;Journal of Physics D: Applied Physics,2020

4. Nonlinear ion drift-diffusion memristance description of TiO 2 RRAM devices;Alialy;Nanoscale Advances,2020

5. Tunable threshold resistive switching characteristics of Pt–Fe2O3core–shell nanoparticleassembly by space charge effect

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