Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/Al x Ga 1- x N heterojunction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference21 articles.
1. Effect of in-plane biaxial strains on the band structure of wurtzite GaN
2. Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
3. Influence of pressure on the optical properties ofInxGa1−xNepilayers and quantum structures
4. Significant strain dependence of piezoelectric constants inInxGa1−xN/GaNquantum wells
5. Effect of electromechanical coupling on the pressure coefficient of light emission in group-III nitride quantum wells and superlattices
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrostatic Pressure and Built-In Electric Field Effects on the Donor Impurity States in Cylindrical Wurtzite GaN/AlxGa1−xN Quantum Rings;Advances in Condensed Matter Physics;2015
2. Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots;Journal of Nanomaterials;2015
3. Binding energies of impurity states in strained wurtzite GaN/Al x Ga 1− x N heterojunctions with finitely thick potential barriers;Chinese Physics B;2014-05-30
4. Hydrostatic pressure dependence of excitonic optical transitions in strained wurtzite GaN/AlN quantum disks;Superlattices and Microstructures;2012-12
5. BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS;Modern Physics Letters B;2012-09-11
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