Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.165335/fulltext
Reference58 articles.
1. Growth and applications of Group III-nitrides
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. III–nitrides: Growth, characterization, and properties
4. Exciton states and interband optical transitions in InGaN quantum dots
5. Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots
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